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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SIE820DF датащи(PDF) 1 Page - Vishay Siliconix |
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SIE820DF датащи(HTML) 1 Page - Vishay Siliconix |
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1 / 10 page  Vishay Siliconix SiE820DF Document Number: 74447 S09-1338-Rev. B, 13-Jul-09 www.vishay.com 1 N-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology for Low Switching Losses • TrenchFET® Power MOSFET • Ultra Low Thermal Resistance Using Top- Exposed PolarPAK® Package for Double-Sided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested • Compliant to RoHS directive 2002/95/EC APPLICATIONS •VRM • DC/DC Conversion • Synchronous Rectification PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) Silicon Limit Package Limit 20 0.0035 at VGS = 4.5 V 136 50 43 nC 0.0064 at VGS = 2.5 V 100 50 Package Drawing www.vishay.com/doc?73398 Ordering Information: SiE820DF-T1-E3 (Lead (Pb)-free) SiE820DF-T1-GE3 (Lead (Pb)-free and Halogen-free) Top View Bottom View Top surface is connected to pins 1, 5, 6, and 10 10 D S S G D D S S G D PolarPAK 1 43 2 5 67 8 9 D DS G D 5 4 3 2 1 6 7 8 9 10 For Related Documents www.vishay.com/ppg?74447 N-Channel MOSFET G D S Notes: a. Package limited is 50 A. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 136 (Silicon Limit) A 50a (Package Limit) TC = 70 °C 50a TA = 25 °C 30b, c TA = 70 °C 24b, c Pulsed Drain Current IDM 80 Continuous Source-Drain Diode Current TC = 25 °C IS 50a TA = 25 °C 4.3b, c Single Pulse Avalanche Current L = 0.1 mH IAS 30 Avalanche Energy EAS 45 mJ Maximum Power Dissipation TC = 25 °C PD 104 W TC = 70 °C 66 TA = 25 °C 5.2b, c TA = 70 °C 3.3b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 |
Аналогичный номер детали - SIE820DF |
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Аналогичное описание - SIE820DF |
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