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LS101A датащи(PDF) 2 Page - Vishay Siliconix

номер детали LS101A
подробное описание детали  Small Signal Schottky Diodes
PDF  5 Pages
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
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LS101A датащи(HTML) 2 Page - Vishay Siliconix

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Document Number 85628
Rev. 1.5, 05-Aug-10
LS101A, LS101B, LS101C
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air
on PC board
50 mm x 50 mm x 1.6 mm
RthJA
320
K/W
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Reverse Breakdown Voltage
IR = 10 µA
LS101A
V(BR)
60
V
LS101B
V(BR)
50
V
LS101C
V(BR)
40
V
Leakage current
VR = 50 V
LS101A
IR
200
nA
VR = 40 V
LS101B
IR
200
nA
VR = 30 V
LS101C
IR
200
nA
Forward voltage drop
IF = 1 mA
LS101A
VF
410
mV
LS101B
VF
400
mV
LS101C
VF
390
mV
IF = 15 mA
LS101A
VF
1000
mV
LS101B
VF
950
mV
LS101C
VF
900
mV
Diode capacitance
VR = 0 V, f = 1 MHz
LS101A
CD
2pF
LS101B
CD
2.1
pF
LS101C
CD
2.2
pF
Figure 1. Reverse Current vs. Reverse Voltage
0.01
0.1
1
10
100
0
1015
2025
3035
4045
50
V
R - Reverse Voltage (V)
16204
T
j = 125 °C
T
j = 100 °C
T
j = 75 °C
T
j = 50 °C
T
j = 25 °C
5
Figure 2. Diode Capacitance vs. Reverse Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
1015
2025
3035
4045
50
V
R - Reverse Voltage (V)
16205
T
j = 25 °C
5



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