MJH16018 datasheet(2/2 Pages) ISC

номер детали	MJH16018

подробное описание детали	isc Silicon NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

MJH16018

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 50mA; IB= 0

800

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 5A ;IB= 1A

IC= 5A ;IB= 1A ;TC=100℃

1.5

2.0

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 10A ;IB= 4A

1.5

VBE(sat)

Base-Emitter Saturation Voltage

IC= 5A ;IB= 1A

IC= 5A ;IB= 1A ;TC=100℃

1.5

ICEV

Collector Cutoff Current

VCEV=1500V,VBE(off)=1.5V

VCEV=1500V,VBE(off)=1.5V;TC=100℃

0.25

1.5

ICER

Collector Cutoff Current

VCE=1500V;RBE=50Ω;TC=100℃

2.5

IEBO

Emitter Cutoff Current

VEB= 6V; IC= 0

1.0

hFE

DC Current Gain

IC= 5A ; VCE= 5V

COB

Output Capacitance

IE= 0; f= 1kHz ; VCB= 10V

400

Switching times; Resistive load

Delay Time

0.05

0.1

μs

Rise Time

0.3

0.4

μs

Storage Time

μs

Fall Time

IC=5A; IB1= 1A;IB2= -2A;

VCC= 250V ,RB2= 3Ω;

PW=30μs

Duty Cycle≤2%

0.9

1.2

μs

isc Website：www.iscsemi.cn

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