MJE18008 datasheet(2/3 Pages) ISC

номер детали	MJE18008

подробное описание детали	Silicon NPN Power Transistors

PDF	3 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

MJE18008

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

IC=0.1A; L=25mH

450

VCEsat-1

Collector-emitter saturation voltage

IC=2A; IB=0.2A

TC=125℃

0.6

0.65

VCEsat-2

Collector-emitter saturation voltage

IC=4.5A; IB=0.9A

TC=125℃

0.7

0.8

VBEsat-1

Base-emitter saturation voltage

IC=2A; IB=0.2A

1.10

VBEsat-2

Base-emitter saturation voltage

IC=4.5A; IB=0.9A

1.25

0.1

VCES=RatedVCES;

VEB=0

0.5

ICES

Collector cut-off current

VCES=800V

TC=125℃

0.1

ICEO

Collector cut-off current

VCE=RatedVCEO; IB=0

0.1

IEBO

Emitter cut-off current

VEB=9V; IC=0

0.1

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=4.5A ; VCE=1V

hFE-3

DC current gain

IC=2A ; VCE=1V

hFE-4

DC current gain

IC=10mA ; VCE=5V

Transition frequency

IC=0.5A ; VCE=10V;f=1MHz

MHz

COB

Collector outoput capacitance

IE=0 ; VCB=10V;f=1MHz

100

Switching times resistive load,Duty Cycle≤10%,Pulse Width=20μs

ton

Turn-on time

0.3

μs

toff

Turn-off time

VCC=300V ,IC=2A

IB1=0.2A; IB2=1.0A

2.5

μs

ton

Turn-on time

0.18

μs

toff

Turn-off time

VCC=300V ,IC=4.5A

IB1=0.9A; IB2=2.25A

2.5

μs

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