MJE18006 datasheet(2/3 Pages) ISC

номер детали	MJE18006

подробное описание детали	Silicon NPN Power Transistors

PDF	3 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

MJE18006

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

IC=0.1A; L=25mH

450

VCEsat-1

Collector-emitter saturation voltage

IC=1.5A ;IB=0.15A

TC=125℃

0.6

0.65

VCEsat-2

Collector-emitter saturation voltage

IC=3A ;IB=0.6A

TC=125℃

0.7

0.8

VBEsat-1

Base-emitter saturation voltage

IC=1.5A; IB=0.15A

1.2

VBEsat-2

Base-emitter saturation voltage

IC=3A; IB=0.6A

1.3

0.1

VCES=RatedVCES;

VEB=0

0.5

ICES

Collector cut-off current

VCES=800V

TC=125℃

0.1

ICEO

Collector cut-off current

VCE=RatedVCEO; IB=0

0.1

IEBO

Emitter cut-off current

VEB=9V; IC=0

0.1

hFE-1

DC current gain

IC=0.5A ; VCE=5V

hFE-2

DC current gain

IC=3A ; VCE=1V

hFE-3

DC current gain

IC=1.5A ; VCE=1V

hFE-4

DC current gain

IC=10mA ; VCE=5V

Transition frequency

IC=0.5A ; VCE=10V;f=1.0MHz

MHz

COB

Collector outoput capacitance

IE=0;VCB=10V;f=1.0MHz

Switching times resistive load,Duty Cycle≤10%,Pulse Width=20μs

ton

Turn-on time

180

toff

Turn-off time

VCC=300V ,IC=3A

IB1=0.6A; IB2=1.5A

1.7

2.5

μs

ton

Turn-on time

0.2

0.3

μs

toff

Turn-off time

VCC=300V ,IC=1.3A

IB1=0.13A; IB2=0.65A

1.2

2.5

μs

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