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MJE4342 датащи(PDF) 2 Page - Inchange Semiconductor Company Limited

номер детали MJE4342
подробное описание детали  Silicon NPN Power Transistors
PDF  3 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJE4342 датащи(HTML) 2 Page - Inchange Semiconductor Company Limited

  MJE4342 Datasheet HTML 1Page - Inchange Semiconductor Company Limited MJE4342 Datasheet HTML 2Page - Inchange Semiconductor Company Limited MJE4342 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
MJE4340/4341/4342/4343
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
MJE4340
100
MJE4341
120
MJE4342
140
VCEO(SUS)
Collector-emitter
sustaining voltage
MJE4343
IC=100mA ;IB=0
160
V
VCEsat-1
Collector-emitter saturation voltage
IC=8A ;IB=0.8A
2.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=16A; IB=2.0A
3.5
V
VBEsat
Base-emitter saturation voltage
IC=16A; IB=2.0A
3.9
V
VBE
Base-emitter on voltage
IC=16A ; VCE=4V
3.9
V
MJE4340
VCE=50V; IB=0
MJE4341
VCE=60V; IB=0
MJE4342
VCE=70V; IB=0
ICEO
Collector
cut-off current
MJE4343
VCE=80V; IB=0
0.75
mA
ICEX
Collector cut-off current
VCE=RatedVCBO; VBE=1.5V
TC=150℃
1.0
5.0
mA
ICBO
Collector cut-off current
VCB=RatedVCB; IE=0
0.75
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1.0
mA
hFE-1
DC current gain
IC=8A ; VCE=2V
15
hFE-2
DC current gain
IC=16A ; VCE=4V
8
COB
Output capacitance
IE=0 ; VCB=10V;f=0.1MHz
800
pF
fT
Transition frequency
IC=-1A ; VCE=20V;f=0.5MHz
1.0
MHz



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