MJE170 datasheet(1/3 Pages) ISC

номер детали	MJE170

подробное описание детали	Silicon PNP Power Transistors

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

MJE170/171/172

DESCRIPTION

・

・With TO-126 package

・Complement to type MJE180/181/182

APPLICATIONS

・For low power audio amplifier and low

current high speed switching applications

PINNING (see Fig.2)

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute Maximun Ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

MJE170

-60

MJE171

-80

VCBO

Collector-base voltage

MJE172

Open emitter

-100

V

MJE170

-40

MJE171

-60

VCEO

Collector-emitter voltage

MJE172

Open base

-80

V

VEBO

Emitter-base voltage

Open collector

-7

V

IC

Collector current

-3

A

ICM

Collector current-peak

-6

A

IB

Base current

-1

A

Ta=25℃

1.5

PC

Collector power dissipation

TC=25℃

12.5

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

Аналогичный номер детали - MJE170

производитель	номер детали	датащи	подробное описание детали
Mospec Semiconductor	MJE170	228Kb / 4P	POWER TRANSISTORS(3.0A,40-80V,12.5W)
Samsung semiconductor	MJE170	135Kb / 4P	PNP (LOW POWER AUDIO AMPLIFIER)
Fairchild Semiconductor	MJE170	49Kb / 5P	Low Power Audio Amplifier Low Current, High Speed Switching Applications
ON Semiconductor	MJE170	83Kb / 6P	Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS January, 2006 ??Rev. 9
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