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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MJ3042 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJ3042 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor MJ3042 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 250 (Min) @ IC =2.5A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)=350V(Min) APPLICATIONS ·Developed for line operated amplifier, series pass and Switching regulator applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 8 V IC Collector Current -Continuous 10 A PC Collector Power Dissipation@TC=25℃ 175 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W isc Website：www.iscsemi.cn |
Аналогичный номер детали - MJ3042 |
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Аналогичное описание - MJ3042 |
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