IRF730 datasheet(1/1 Pages) ISC

номер детали	IRF730

подробное описание детали	N-channel mosfet transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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MOSFET

INCHANGE

IRF730

N-channel mosfet transistor

Features

・With TO-220 package

1 2 3

・Simple drive requirements

・Fast switching

・VDSS=400V; RDS(ON)≤1.0Ω;ID=5.5A

・1.gate 2.drain 3.source

Absolute Maximum Ratings Tc=25℃

SYMBOL

PARAMETER

RATING

UNIT

VDSS

Drain-source voltage (VGS=0)

400

V

VGS

Gate-source voltage

±20

V

ID

Drain Current-continuous@ TC=25℃

5.5

A

Ptot

Total Dissipation@TC=25℃

74

W

Tj

Max. Operating Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

TO-220

Electrical Characteristics Tc=25℃

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)DSS

Drain-source breakdown voltage

VGS=0; ID=0.25mA

400

V

VGS(TH)

Gate threshold voltage

VDS= VGS; ID=0.25mA

2

4

V

RDS(ON)

Drain-source on-stage resistance

VGS=10V; ID=3.3A

1.0

Ω

IGSS

Gate source leakage current

VGS=±20V;VDS=0

±100

nA

IDSS

Zero gate voltage drain current

VDS=400V; VGS=0

25

uA

VSD

Diode forward voltage

IF=5.5A; VGS=0

1.6

V

Аналогичный номер детали - IRF730

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	IRF730	59Kb / 7P	PowerMOS transistor Avalanche energy rated March 1999 Rev 1.000
STMicroelectronics	IRF730	94Kb / 8P	N - CHANNEL 400V - 0.75 ohm - 5.5A - TO-220 PowerMESH] MOSFET Aug-1998
Fairchild Semiconductor	IRF730	177Kb / 6P	N-Channel Power MOSFETs, 5.5A, 350 V/400V
Fairchild Semiconductor	IRF730	898Kb / 10P	400V N-Channel MOSFET
Intersil Corporation	IRF730	54Kb / 7P	5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET July 1999

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