Document Number: 91126

www.vishay.com

S10-2466-Rev. C, 25-Oct-10

1

Power MOSFET

IRFD024, SiHFD024

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• For Automatic Insertion

•End Stackable

• 175 °C Operating Temperature

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable

case style which can be stacked in multiple combinations on

standard 0.1" pin centers. The dual drain serves as a thermal

link to the mounting surface for power dissipation levels up

to 1 W.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

60

0.10

25

5.8

11

Configuration

Single

N-Channel MOSFET

G

D

S

HVMDIP

D

S

G

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

HVMDIP

Lead (Pb)-free

IRFD024PbF

SiHFD024-E3

SnPb

IRFD024

SiHFD024

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

± 20

Continuous Drain Current

2.5

A

1.8

20

Linear Derating Factor

0.0083

W/°C

91

mJ

Maximum Power Dissipation

1.3

W

dV/dt

4.5

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 175

°C

Soldering Recommendations (Peak Temperature)

for 10 s

* Pb containing terminations are not RoHS compliant, exemptions may apply