IRFD020 datasheet(2/8 Pages) VISHAY

2 / 8 page

www.vishay.com

Document Number: 91465

S11-0915-Rev. A, 16-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFD020, SiHFD020

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

 300 μs; duty cycle  2 %.

c. VDD = 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25 

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

120

°C/W

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 500

Zero Gate Voltage Drain Current

IDSS

VDS = max. rating, VGS = 0 V

250

μA

VDS = max. rating x 0.8, VGS = 0 V, TC = 125

1000

On-State Drain Currentb

ID(on)

VGS = 10 V

VDS > ID(on) x RDS(on) max.

2.4

Drain-Source On-State Resistanceb

RDS(on)

VGS = 10 V

ID = 1.4 A

0.080

0.10



Forward Transconductanceb

gfs

VDS = 20 V, ID = 7.5 A

4.9

7.3

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz

400

Output Capacitance

Coss

260

Reverse Transfer Capacitance

Crss

-44

Total Gate Charge

VGS = 10 V

ID = 15 A,

VDS = max. rating x 0.8

-16

Gate-Source Charge

Qgs

-4.7

7.1

Gate-Drain Charge

Qgd

-4.7

7.1

Turn-On Delay Time

td(on)

VDD = 25 V, ID = 15 A,

Rg = 18 , RD = 1.7 

-8.7

Rise Time

-55

Turn-Off Delay Time

td(off)

-16

Fall Time

-26

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.0

Internal Source Inductance

-6.0

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

2.4

Pulsed Diode Forward Currentc

ISM

Body Diode Voltagea

VSD

TC = 25 °C, IS = 2.4 A, VGS = 0 V

1.4

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 15 A, dI/dt = 100 A/μs

130

310

Body Diode Reverse Recovery Charge

Qrr

0.17

0.34

0.85

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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