BUL810 datasheet(2/2 Pages) ISC

номер детали	BUL810

подробное описание детали	isc Silicon NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BUL810

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 100mA ; L= 25mH

450

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 10mA; IC= 0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 5A ;IB= 1A

1.0

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 8A ;IB= 1.6A

1.5

VCE(sat)-3

Collector-Emitter Saturation Voltage

IC= 12A ;IB= 2.4A

5.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 5A ;IB= 1A

1.3

VBE(sat)

Base-Emitter Saturation Voltage

IC= 8A ;IB= 1.6A

1.6

ICES

Collector Cutoff Current

VCE=1000V; VBE= 0;

VCE=1000V; VBE= 0;TC=125℃

0.1

0.5

ICEO

Collector Cutoff Current

VCE= 450V; IB= 0

0.25

hFE-1

DC Current Gain

IC= 5A ; VCE= 5V

hFE-2

DC Current Gain

IC= 10mA ; VCE= 5V

Switching Times

(inductive load)

Storage Time

1.5

2.3

μs

Fall Time

IC= 8A ;IB1= 1.6A;VBE(off)= -5V

RBB= 0.4Ω, VCL= 350V,

L= 200μH

110

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