BUL52B datasheet(1/3 Pages) ISC

номер детали	BUL52B

подробное описание детали	Silicon PNP Power Transistors

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

BUL52B

DESCRIPTION

・

・With TO-220C package

・High voltage

・Fast switching

・High energy rating

APPLICATIONS

・Designed for use in electronic

ballast applications

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

800

V

VCEO

Collector-emitter voltage

Open base

400

V

VEBO

Emitter-base voltage

Open collector

10

V

IC

Collector current (DC)

8

A

ICM

Collector current-Peak

12

A

IB

Base current

4

A

Ptot

Total power dissipation

TC=25℃

100

W

Tstg

Storage temperature

-55~150

℃

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Seme LAB	BUL52B	19Kb / 2P	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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