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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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GSOT03C датащи(PDF) 4 Page - Vishay Siliconix |
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GSOT03C датащи(HTML) 4 Page - Vishay Siliconix |
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4 / 12 page  www.vishay.com For technical questions, contact: ESDprotection@vishay.com Document Number: 85824 4 Rev. 2.0, 22-Jul-10 GSOT03C to GSOT36C Vishay Semiconductors Two-Line ESD-Protection in SOT-23 BiAs-MODE (2-line bidirectional asymmetrical protection mode) With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between pin 1 and pin 3 offer a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behaviour is bidirectional and asymmetrical (BiAs). ABSOLUTE MAXIMUM RATINGS GSOT15C PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 8A Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot 8A Peak pulse power Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 345 W Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot 400 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV Operating temperature Junction temperature TJ - 40 to + 125 °C Storage temperature TSTG - 55 to + 150 °C ABSOLUTE MAXIMUM RATINGS GSOT24C PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 5A Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot 5A Peak pulse power Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 235 W Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot 240 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV Operating temperature Junction temperature TJ - 40 to + 125 °C Storage temperature TSTG - 55 to + 150 °C ABSOLUTE MAXIMUM RATINGS GSOT36C PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot IPPM 3.5 A Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot 3.5 A Peak pulse power Pin 1 to 3 or pin 2 to 3 acc. IEC 61000-4-5, tp = 8/20 μs; single shot PPP 248 W Pin 1 to 2 or pin 2 to 1; pin 3 not connected acc. IEC 61000-4-5, tp = 8/20 μs; single shot 252 W ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses ± 30 kV Operating temperature Junction temperature TJ - 40 to + 125 °C Storage temperature TSTG - 55 to + 150 °C |
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