BU508AF datasheet(1/3 Pages) ISC

номер детали	BU508AF

подробное описание детали	Silicon NPN Power Transistors

PDF	3 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BU508AF

DESCRIPTION

・With TO-3PFa package

・High voltage

・High speed switching

APPLICATIONS

・For use in horizontal deflection

circuits of high resolution monitors

PINNING

DESCRIPTION

1

Base

2

Collector

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

1500

V

VCEO

Collector-emitter voltage

Open base

700

V

VEBO

Emitter-base voltage

Open collector

7.5

V

IC

Collector current (DC)

8

A

ICP

Collector current (Pulse)

15

A

IB

Base current (DC)

4

A

IBM

Base current (Pulse)

6

A

Ptot

Total power dissipation

TC=25℃

34

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

Аналогичный номер детали - BU508AF

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	BU508AF	61Kb / 7P	Silicon Diffused Power Transistor July 1998 Rev 1.200
Wing Shing Computer Com...	BU508AF	142Kb / 1P	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
Fairchild Semiconductor	BU508AF	51Kb / 4P	TV Horizontal Output Applications
Continental Device Indi...	BU508AF	40Kb / 3P	NPN POWER TRANSISTORS
STMicroelectronics	BU508AF	99Kb / 8P	High voltage NPN Power transistor for standard Definition CRT display 02-Mar-2007

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Аналогичное описание - BU508AF

производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	BUS47	79Kb / 2P	NPN SILICON POWER TRANSISTORS
Bourns Electronic Solut...	BD241	107Kb / 5P	NPN SILICON POWER TRANSISTORS
Bourns Electronic Solut...	BU426	129Kb / 6P	NPN SILICON POWER TRANSISTORS
Inchange Semiconductor ...	S2055A	40Kb / 3P	Silicon NPN Power Transistors
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