BDY25 datasheet(1/2 Pages) ISC

номер детали	BDY25

подробное описание детали	isc Silicon NPN Power Transistor

PDF	2 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BDY25

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 140V(Min.)

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 0.6V(Max)@ IC = 2A

·High Switching Speed

APPLICATIONS

·Designed for LF signal powe amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

200

V

VCEO

Collector-Emitter Voltage

140

V

VEBO

Emitter-Base Voltage

10

V

IC

Collector Current-Continuous

6

A

IB

B

Base Current

3

A

PC

Collector Power Dissipation@TC=25℃

87.5

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.0

℃/W

isc Website：www.iscsemi.cn

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