Document Number: 88597

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Revision: 08-Apr-10

3

FEP30AP thru FEP30JP

Vishay General Semiconductor

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.1

1

10

100

0

0.2

0.4

0.6

0.8

1.0

Instantaneous Forward Voltage (V)

1.8

1.6

1.4

1.2

Pulse Width = 300 μs

1 % Duty Cycle

T

T

50 V to 200 V

300 V to 400 V

500 V to 600 V

Percent of Rated Peak Reverse Voltage (%)

0.01

0.1

1

10

100

1000

10

20

30

40

50

60

70

80

90

100

T

T

T

50 V to 200 V

300 V to 600 V

0.1

1

10

100

10

100

1000

Reverse Voltage (V)

T

f = 1.0 MHz

V

50 V to 400 V

500 V to 600 V

PIN 1

PIN 3

CASE

PIN 2

TO-247AD (TO-3P)

0.245 (6.2)

0.225 (5.7)

0.645 (16.4)

0.625 (15.9)

0.323 (8.2)

0.313 (7.9)

0.142 (3.6)

0.138 (3.5)

0.170

(4.3)

0.086 (2.18)

0.076 (1.93)

0.160 (4.1)

0.140 (3.5)

0.225 (5.7)

0.205 (5.2)

0.127 (3.22)

0.117 (2.97)

0.048 (1.22)

0.044 (1.12)

0.795 (20.2)

0.775 (19.6)

0.840 (21.3)

0.820 (20.8)

1

2

3

0.078 (1.98) REF.

0.203 (5.16)

0.193 (4.90)

10° TYP.

Both Sides

30°

10

1° REF.

Both Sides

0.030 (0.76)

0.020 (0.51)

0.118 (3.0)

0.108 (2.7)