BDV64 datasheet(1/2 Pages) ISC

номер детали	BDV64

подробное описание детали	isc Silicon PNP Darlington Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

BDV64/A/B/C

DESCRIPTION

·Collector Current -IC= -12A

·Collector-Emitter Saturation Voltage-

: VCE(sat)= -2.0V(Max.)@ IC= -5A

·Complement to Type BDV65/A/B/C

APPLICATIONS

·Designed for audio output stages and general amplifier

and switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDV64

-60

BDV64A

-80

BDV64B

-100

VCBO

Collector-Base

Voltage

BDV64C

-120

V

BDV64

-60

BDV64A

-80

BDV64B

-100

VCEO

Collector-Emitter

Voltage

BDV64C

-120

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-12

A

ICM

Collector Current-Peak

-15

A

IB

B

Base Current-Continuous

-0.5

A

Collector Power Dissipation

@ TC=25℃

125

PC

Collector Power Dissipation

@ Ta=25℃

3.5

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.0

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

35.7

℃/W

isc Website：www.iscsemi.cn

Аналогичный номер детали - BDV64

производитель	номер детали	датащи	подробное описание детали
Mospec Semiconductor	BDV64	170Kb / 4P	POWER TRANSISTORS(12A,125W)
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Transys Electronics	BDV64	643Kb / 5P	PNP SILICON POWER DARLINGTONS
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