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BD315 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали BD315
подробное описание детали  isc Silicon NPN Power Transistor
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD315 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD315
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE= 25(Min.)@IC = 8A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0 V(Max)@ IC = 8A
·Complement to Type BD316
APPLICATIONS
·Designed for high quality amplifiers operating up to 100 watts
into 4 ohm load.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
16
A
ICM
Collector Current-Peak
20
A
IB
B
Base Current-Continuous
5
A
PC
Collector Power Dissipation@TC=25℃
200
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.875
℃/W
isc Website：www.iscsemi.cn
1


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