BD238 datasheet(1/3 Pages) ISC

номер детали	BD238

подробное описание детали	Silicon PNP Power Transistors

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

BD234 BD236 BD238

DESCRIPTION

・

・With TO-126 package

・Complement to type BD233/235 /237

APPLICATIONS

・For medium power linear and

switching applications

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

BD234

-45

BD236

-60

VCBO

Collector-base voltage

BD238

Open emitter

-100

V

BD234

-45

BD236

-60

VCEO

Collector-emitter voltage

BD238

Open base

-80

V

VEBO

Emitter -base voltage

Open collector

-5

V

IC

Collector current (DC)

-2

A

ICM

Collector current-Peak

-6

A

PC

Collector power dissipation

TC=25℃

25

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

Аналогичный номер детали - BD238

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	BD238	75Kb / 5P	COMPLEMENTARY SILICON POWER TRANSISTORS Sep-1997
Fairchild Semiconductor	BD238	37Kb / 4P	Medium Power Linear and Switching
STMicroelectronics	BD238	265Kb / 5P	COMPLEMENTARY SILICON POWER TRANSISTORS Feb-2003
ON Semiconductor	BD238	68Kb / 4P	Plastic Medium Power Bipolar Transistors November, 2005 ??Rev. 14
Fairchild Semiconductor	BD238	43Kb / 4P	Medium Power Linear and Switching Applications

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Аналогичное описание - BD238

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