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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SD1212 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1212 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 4 page  Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1212 DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Large current capacity. ・Complement to type 2SB903 APPLICATIONS ・Suitable for relay drivers, high-speed inverters,converters, and other general large current switching applications. ・High-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 30 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 12 A ICM Collector current-peak 20 A 1.75 PC Collector power dissipation TC=25℃ 35 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ |
Аналогичный номер детали - 2SD1212 |
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Аналогичное описание - 2SD1212 |
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