2SD525 datasheet(1/3 Pages) ISC

номер детали	2SD525

подробное описание детали	Silicon NPN Power Transistors

PDF	3 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD525

DESCRIPTION

・

・With TO-220C package

・Complement to type 2SB595

・High breakdown voltage :VCEO=100V

・Low collector saturation volage

: VCE(sat)=2.0V(Max)

APPLICATIONS

・Power amplifier applications

・Recommend for 30W high fidelity

audio frequency amplifier output stage

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Tc=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

100

V

VCEO

Collector-emitter voltage

Open base

100

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

5

A

IE

Emitter current

-5

A

PC

Collector power dissipation

TC=25℃

40

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Аналогичный номер детали - 2SD525

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Wing Shing Computer Com...	2SD525	69Kb / 1P	LOW FREQUENCY POWER AMPLIFIER(NPN EPITAXIAL)
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Аналогичное описание - 2SD525

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