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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC5407 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC5407 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5407 isc Website：www.iscsemi.cn DESCRIPTION ·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 15 A ICM Collector Current- Peak 20 A IB B Base Current- Continuous 8 A Collector Power Dissipation @ TC=25℃ 100 PC Collector Power Dissipation @ Ta=25℃ 3 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Аналогичный номер детали - 2SC5407 |
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Аналогичное описание - 2SC5407 |
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