Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

PNP/NPN Epitaxial Planar Silicon Transistors

50V/4A Switching Applications

Ordering number:ENN4135

2SA1855/2SC4837

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

91003TN (KT)/91098HA (KT)/5132MH (KOTO) No.4135–1/4

r

e

t

e

m

a

r

a

Pl

o

b

m

y

Ss

n

o

i

t

i

d

n

o

Cs

g

n

i

t

a

Rt

i

n

U

e

g

a

t

l

o

V

e

s

a

B

-

o

t

-

r

o

t

c

e

ll

o

CV

O

B

C

0

6

)

–

(V

e

g

a

t

l

o

V

r

e

t

t

i

m

E

-

o

t

-

r

o

t

c

e

ll

o

CV

O

E

C

0

5

)

–

(V

e

g

a

t

l

o

V

e

s

a

B

-

o

t

-

r

e

t

t

i

m

EV

O

B

E

6

)

–

(V

t

n

e

r

r

u

C

r

o

t

c

e

ll

o

CIC

4

)

–

(A

)

e

s

l

u

P

(

t

n

e

r

r

u

C

r

o

t

e

ll

o

CI P

C

6

)

–

(A

n

o

i

t

a

p

i

s

s

i

D

r

o

t

c

e

ll

o

CPC

5

.

1W

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

Jj

T

0

5

1

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

Sg

t

s

T

0

5

1

+

o

t

5

5

–

( ) : 2SA1855

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2084B

[2SA1855/2SC4837]

Applications

· Power supplies, relay drivers, lamp drivers.

Features

· Adoption of FBET and MBIT processes.

· Large allowable collector dissipation.

· Low saturation voltage.

· Wide ASO and large current capacity.

· Usage of radial taping to meet automatic mounting.

˚C

˚C

Electrical Characteristics at Ta = 25˚C

1 : Emitter

2 : Collector

3 : Base

SANYO : FLP

r

e

t

e

m

a

r

a

Pl

o

b

m

y

Ss

n

o

i

t

i

d

n

o

C

s

g

n

i

t

a

R

t

i

n

U

n

i

mp

y

tx

a

m

t

n

e

r

r

u

C

f

f

o

t

u

C

r

o

t

c

e

ll

o

CI

O

B

C

V B

C

I

,

V

0

4

)

–

(

=

E 0

=1

)

–

(A

μ

t

n

e

r

r

u

C

f

f

o

t

u

C

r

e

t

t

i

m

EI

O

B

E

V B

E

I

,

V

4

)

–

(

=

C 0

=1

)

–

(A

μ

n

i

a

G

t

n

e

r

r

u

C

C

D

h E

F 1V E

C

I

,

V

2

)

–

(

=

C

A

m

0

1

)

–

(

=*

0

0

1*

0

0

4

h E

F 2V E

C

I

,

V

2

)

–

(

=

C

A

3

)

–

(

=0

4

t

c

u

d

o

r

P

h

t

d

i

w

d

n

a

B

n

i

a

GfT

V E

C

I

,

V

0

1

)

–

(

=

C

A

m

0

5

)

–

(

=0

5

1z

H

M

e

c

n

a

t

i

c

a

p

a

C

t

u

p

t

u

OC b

o

V B

C

z

H

M

1

=

f

,

V

0

1

)

–

(

=5

2

)

9

3

(F

p

Continued on next page.

k

n

a

RR

S

T

h E

F

0

0

2

o

t

0

0

10

8

2

o

t

0

4

10

0

4

o

t

0

0

2

10.5

1.2

1.6

0.5

2.5

2.5

4.5

1.2

1.4

2.6

1.9

0.5

12

3