| поискавой системы для электроныых деталей |
|
2SB1503 датащи(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SB1503 датащи(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1503 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -140 V VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -7mA B -2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -7A; IB= -7mA B -3.0 V ICBO Collector Cutoff Current VCB= -160V; IE= 0 -100 μA ICEO Collector Cutoff Current VCE= -140V; IB= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -100 μA hFE-1 DC Current Gain IC= -1A; VCE= -5V 2000 hFE-2 DC Current Gain IC= -7A; VCE= -5V 5000 30000 fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V 20 MHz Switching Times ton Turn-on Time 1.0 μs tstg Storage Time 1.5 μs tf Fall Time IC= -7A; IB1= -IB2= -7mA, VCC= -50V 1.2 μs hFE-2 Classifications Q S P 5000-15000 7000-21000 8000-30000 isc Website:www.iscsemi.cn 2 |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |