FD2000 datasheet(34/37 Pages) FINECHIPS

34 / 37 page

FD2000

Rev1.0

34/37

16.3. ELECTRICAL CHARACTERISTICS IN THE ALLOWABLE OPERATING RANGES

Ratings

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Hysteresis

CE, CL, DI, RESETB

–

0.1 VDD

–

Input high level current

IIH

CE, CL, DI, RESETB,

OSCI: VI = 6.0 V

–

5.0

μA

Input low level current

IIL

CE, CL, DI, RESETB,

OSCI: VI = 0 V

– 5.0

–

μA

VOH1

S1 to S60: IO = –20 μA

VLCD – 0.6

–

VOH2

COM1 to COM10: IO = –100 μA

VLCD – 0.6

–

Output high level voltage

VOH3

OSCO: IO = –500 μA

VDD – 1.0

–

VOL1

S1 to S60: IO = 20 μA

–

0.6

VOL2

COM1 to COM10: IO = 100 μA

–

0.6

Output low level voltage

VOL3

OSCO: IO = 500 μA

–

1.0

VMID1

S1 to S60: IO ±20 μA

2/4 VLCD – 0.6

–

2/4 VLCD + 0.6

VMID2

COM1 to COM10: IO = ±100 μA

3/4 VLCD – 0.6

–

3/4 VLCD + 0.6

Output middle level

voltage

NOTE1

VMID3

COM1 to COM10: IO = ±100 μA

1/4 VLCD – 0.6

–

1/4 VLCD + 0.6

Oscillator frequency

fOSC

OSCI, OSCO: ROSC = 33 kΩ ,

COSC = 220 pF

210

300

390

kHz

IDD1

VDD: power saving mode

–

μA

IDD2

VDD: VDD = 6.0 V, output open,

fOSC = 300 kHz

–

450

900

μA

ILCD1

VLCD: power saving mode

–

μA

Supply current

ILCD2

VLCD: VLCD = 10.0 V, output

open, fOSC = 300 kHz

–

200

400

μA

NOTE: Excluding the bias voltage generation divider resistor built into the VLCD1, VLCD2, and VLCD3.

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