2SB1193 datasheet(1/3 Pages) ISC

номер детали	2SB1193

подробное описание детали	Silicon PNP Power Transistors

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB1193

DESCRIPTION

・With TO-220Fa package

・High DC current gain

・High speed switching

・DARLINGTON

・Complement to type 2SD1773

APPLICATIONS

・For medium speed switching applications

PINNING

DESCRIPTION

1

Base

2

Collector

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-120

V

VCEO

Collector -emitter voltage

Open base

-120

V

VEBO

Emitter-base voltage

Open collector

-7

V

IC

Collector current

-8

A

ICM

Collector current-peak

-12

A

Ta=25℃

2

PC

Collector power dissipation

TC=25℃

50

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Fig.1 simplified outline (TO-220Fa) and symbol

Аналогичный номер детали - 2SB1193

производитель	номер детали	датащи	подробное описание детали
Panasonic Semiconductor	2SB1193	79Kb / 3P	For Midium-Speed Power Switching
Savantic, Inc.	2SB1193	129Kb / 3P	Silicon PNP Power Transistors
Quanzhou Jinmei Electro...	2SB1193	151Kb / 3P	Silicon PNP Power Transistors
Savantic, Inc.	2SB1193	131Kb / 3P	Silicon PNP Power Transistors
Quanzhou Jinmei Electro...	2SB1193	151Kb / 3P	Silicon PNP Power Transistors

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Аналогичное описание - 2SB1193

производитель	номер детали	датащи	подробное описание детали
Bourns Electronic Solut...	BD244	106Kb / 5P	PNP SILICON POWER TRANSISTORS
Bourns Electronic Solut...	BD544	103Kb / 5P	PNP SILICON POWER TRANSISTORS
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Аналогичный номер детали - 2SB1193

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