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SW634 датащи(PDF) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

номер детали SW634
подробное описание детали  N-channel MOSFET
PDF  7 Pages
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производитель  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
домашняя страница  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW634 датащи(HTML) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

  SW634 Datasheet HTML 1Page - Xian Semipower Electronic Technology Co., Ltd. SW634 Datasheet HTML 2Page - Xian Semipower Electronic Technology Co., Ltd. SW634 Datasheet HTML 3Page - Xian Semipower Electronic Technology Co., Ltd. SW634 Datasheet HTML 4Page - Xian Semipower Electronic Technology Co., Ltd. SW634 Datasheet HTML 5Page - Xian Semipower Electronic Technology Co., Ltd. SW634 Datasheet HTML 6Page - Xian Semipower Electronic Technology Co., Ltd. SW634 Datasheet HTML 7Page - Xian Semipower Electronic Technology Co., Ltd.  
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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Fig. 9. Maximum drain current vs.
case temperature.
Fig. 8. On resistance variation
vs. junction temperature
Fig. 10. Maximum safe operating area
Fig. 11. Transient thermal response curve
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
،ط Notes :
1. V
GS
= 0 V
2. I
D
= 250 ¥ىA
T
J
, Junction Temperature [
oC]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
،ط Notes :
1. V
GS
= 10 V
2. I
D
= 4.5 A
T
J
, Junction Temperature [
oC]
25
50
75
100
125
150
0
2
4
6
8
10
T
C'
Case Temperature [
o
C]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
10
1
،ط Notes :
1. Z
¥èJC
(t) = 1.60 ،ة/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
¥èJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1
, Square Wave Pulse Duration [sec]
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
DC
10 ms
1 ms
100 s
Operation in This Area
is Limited by R
DS(on)
،ط Notes :
1. T
C
= 25
oC
2. T
J
= 150
oC
3. Single Pulse
V
DS
, Drain-Source Voltage [V]
SW634
SAMWIN
4/7



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