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SW30N06 датащи(PDF) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

номер детали SW30N06
подробное описание детали  N-channel MOSFET
PDF  7 Pages
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производитель  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
домашняя страница  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW30N06 датащи(HTML) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

  SW30N06 Datasheet HTML 1Page - Xian Semipower Electronic Technology Co., Ltd. SW30N06 Datasheet HTML 2Page - Xian Semipower Electronic Technology Co., Ltd. SW30N06 Datasheet HTML 3Page - Xian Semipower Electronic Technology Co., Ltd. SW30N06 Datasheet HTML 4Page - Xian Semipower Electronic Technology Co., Ltd. SW30N06 Datasheet HTML 5Page - Xian Semipower Electronic Technology Co., Ltd. SW30N06 Datasheet HTML 6Page - Xian Semipower Electronic Technology Co., Ltd. SW30N06 Datasheet HTML 7Page - Xian Semipower Electronic Technology Co., Ltd.  
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Fig. 9. Maximum drain current vs.
case temperature.
Fig. 8. On resistance variation
vs. junction temperature
Fig. 10. Maximum safe operating area
Fig. 11. Transient thermal response curve
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
*. Notes :
1. V
GS
= 0 V
2. I
D
= 250 uA
T
J
, Junction Temperature [
oC]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*. Notes :
1. V
GS
= 10 V
2. I
D
= 15 A
T
J
, Junction Temperature [
oC]
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
100us
DC
10 ms
1 ms
Operation in This Area
is Limited by R
DS(on)
*. Notes :
1. T
C
= 25
oC
2. T
J
= 175
oC
3. Single Pulse
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
T
C'
Case Temperature [
oC]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
*. Notes :
1. Z
¥èJC
(t) = 1.78
OC/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
¥èJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1
, Square Wave Pulse Duration [sec]
t
1
t
2
SAMWIN
4/7
SW30N06



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