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SW12N65 датащи(PDF) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

номер детали SW12N65
подробное описание детали  N-channel MOSFET
PDF  7 Pages
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производитель  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
домашняя страница  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW12N65 датащи(HTML) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

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Fig. 9. Maximum drain current vs.
case temperature.
Fig. 8. On resistance variation
vs. junction temperature
Fig. 10. Maximum safe operating area (TO-220F)
Fig. 11. Transient thermal response curve
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
*. Notes :
1. V
GS
= 0 V
2. I
D
= 250 uA
T
J
, Junction Temperature [
oC]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*. Notes :
1. V
GS
= 10 V
2. I
D
= 6.0 A
T
J
, Junction Temperature [
oC]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
100 ms
10
µs
DC
10 ms
1 ms
100
µs
Operation in This Area
is Limited by R
DS(on)
Notes :
※
1. T
C = 25
oC
2. T
J = 150
oC
3. Single Pulse
V
DS, Drain-Source Voltage [V]
25
50
75
100
125
150
0
2
4
6
8
10
12
14
T
C, Case Temperature [
]
℃
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
No te s :
※
1 . Z
θ JC ( t ) = 0 . 56
/W M a x .
℃
2 . D u ty F a c to r, D = t
1/t 2
3 . T
JM - T C = P DM * Z θ JC (t )
s ingle puls e
D= 0 .5
0.02
0.2
0.05
0.1
0.0 1
t
1 , S q u a r e W a v e P u l s e D u r a t i on [s ec ]
t1
PDM
t2
SW
SW12
12N6
N6 5
5
SAMWIN



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