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F05B23VR датащи(PDF) 2 Page - Shindengen Electric Mfg.Co.Ltd |
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F05B23VR датащи(HTML) 2 Page - Shindengen Electric Mfg.Co.Ltd |
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2 / 12 page ![]() Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd F05B23VR VR Series Power MOSFET ●Electrical Characteristics Tc = 25℃ Item Symbol Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS ID = 250μA, VGS = 0V 230 V Zero Gate Voltage Drain Current IDSS VDS = 230V, VGS = 0V 250 μA Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V ±0.1 Forward Transconductance gfs ID = 0.5A, VDS = 10V 0.2 0.4 S Static Drain-Source On-state Resistance RDS(ON) ID = 0.5A, VGS = 10V 5.5 8 Ω Gate Threshold Voltage VTH ID = 0.2mA, VDS = 10V 23 4 V Source-Drain Diode Forward Voltage VSD IS = 0.5A, VGS = 0V 1.5 Thermal Resistance θja junction to ambient, on alumina substrate 83.3 ℃/W θjc junction to case 35.7 Total Gate Charge Qg VGS = 10V, ID = 0.5A, VDD = 200V 2.7 nC Input Capacitance Ciss 45 Reverse Transfer Capacitance Crss VDS = 10V, VGS = 0V, f = 1MHZ 4.5 pF Output Capacitance Coss 30 Turn-On Time ton ID = 0.5A, VGS = 10V, RL = 200Ω 30 60 ns Turn-Off Time toff 50 100 |
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