2SB880 datasheet(1/2 Pages) ISC

номер детали	2SB880

подробное описание детали	isc Silicon PNP Darlington Power Transistor

PDF	2 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

2SB880

DESCRIPTION

·High DC Current Gain-

: hFE = 2000(Min)@ IC= -2A

·Wide Area of Safe Operation

·Low Collector-Emitter Saturation Voltage-

: VCE(sat) = -1.5V(Max)@ IC= -2A

·Complement to Type 2SD1190

APPLICATIONS

·Designed for motor drivers, printer hammer drivers, relay

drivers, voltage regulators applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-70

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-4

A

ICM

Collector Current-Peak

-6

A

Collector Power Dissipation

TC=25℃

30

PC

Collector Power Dissipation

Ta=25℃

1.75

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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