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80CPU02-F3 датащи(PDF) 1 Page - Vishay Siliconix

номер детали 80CPU02-F3
подробное описание детали  Hyperfast Rectifier, 2 x 40 A FRED Pt
PDF  7 Pages
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

80CPU02-F3 датащи(HTML) 1 Page - Vishay Siliconix

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Document Number: 93457
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Nov-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Hyperfast Rectifier, 2 x 40 A FRED Pt®
VS-80CPU02-F3
Vishay Semiconductors
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTIONS/APPLICATIONS
VS-80CPU02-F3 series are the state of the art ultrafast
recovery rectifiers designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of welding, SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package
TO-247AC
IF(AV)
2 x 40 A
VR
200 V
VF at IF
1.02 V
trr (typ.)
34 ns
TJ max.
175 °C
Diode variation
Common cathode
Base
common
cathode
Common
cathode
2
2
13
Anode
1
Anode
2
TO-247AC
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Repetitive peak reverse voltage
VRRM
200
V
Average rectified forward current
per leg
IF(AV)
TC = 145 °C
40
A
total device
80
Non-repetitive peak surge current per leg
IFSM
TJ = 25 °C
330
Operating junction and storage temperatures
TJ, TStg
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
200
-
-
V
Forward voltage
VF
IF = 40 A
-
0.94
1.02
IF = 40 A, TJ = 150 °C
-
0.80
0.90
IF = 80 A
-
1.07
1.20
IF = 80 A, TJ = 150 °C
-
0.97
1.08
Reverse leakage current
IR
VR = VR rated
-
-
5
μA
TJ = 150 °C, VR = VR rated
-
-
500
Junction capacitance
CT
VR = 200 V
-
120
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
3.5
-
nH


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