2SB676 datasheet(1/3 Pages) ISC

номер детали	2SB676

подробное описание детали	Silicon PNP Power Transistors

PDF	3 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB676

DESCRIPTION

・With TO-220C package

・High DC Current Gain

: hFE=2000 @VCE=-2V, IC=-1A (Min.)

・DARLINGTON

APPLICATIONS

・For switching applications

・Hammer drive, pulse motor drive applications

・Power amplifier applications

PINNING

DESCRIPTION

1

Base

2

Collector; connected to

mounting base

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-100

V

VCEO

Collector-emitter voltage

Open base

-80

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current-DC

-4

A

PC

Collector power dissipation

TC=25℃

30

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Аналогичный номер детали - 2SB676

производитель	номер детали	датащи	подробное описание детали
List of Unclassifed Man...	2SB676	39Kb / 1P	2SB676
Savantic, Inc.	2SB676	98Kb / 3P	Silicon PNP Power Transistors
Quanzhou Jinmei Electro...	2SB676	155Kb / 3P	Silicon PNP Power Transistors
Savantic, Inc.	2SB676	100Kb / 3P	Silicon PNP Power Transistors
New Jersey Semi-Conduct...	2SB676	125Kb / 2P	Silicon PNP Darlington Power Transistor

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Аналогичное описание - 2SB676

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Bourns Electronic Solut...	BD244	106Kb / 5P	PNP SILICON POWER TRANSISTORS
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