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2SB632 датащи(PDF) 2 Page - Inchange Semiconductor Company Limited

номер детали 2SB632
подробное описание детали  Silicon PNP Power Transistors
PDF  4 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB632 датащи(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SB632 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SB632 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SB632 Datasheet HTML 3Page - Inchange Semiconductor Company Limited 2SB632 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon PNP Power Transistors
2SB632 2SB632K
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2SB632
-25
V(BR)CEO
Collector-emitter
breakdown voltage
2SB632K
IC=-1mA; RBE=∞
-35
V
2SB632
-25
V(BR)CBO
Collector-base
breakdown voltage
2SB632K
IC=-10μA ;IE=0
-35
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-10μA ;IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-1.5A ;IB=-0.15A
-0.4
-0.9
V
VBEsat
Base-emitter saturation voltage
IC=-1.5A ;IB=-0.15A
-1.1
-1.5
V
ICBO
Collector cut-off current
VCB=-20V; IE=0
-1
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-1
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
60
320
hFE-2
DC current gain
IC=-1.5A ; VCE=-2V
30
fT
Transition frequency
IC=-50mA ; VCE=-10V
100
MHz
COB
Collector output capacitance
f=1MHz ; VCB=-10V
45
pF
Switching times
ton
Turn-on time
0.06
μs
tf
Fall time
0.08
μs
tstg
Storage time
IC=500mA ; VCE=12V
IB1=-IB2=50mA
0.40
μs
hFE-1 Classifications
D
E
F
60-120
100-200
160-320



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