2SB507 datasheet(1/3 Pages) ISC

номер детали	2SB507

подробное описание детали	Silicon PNP Power Transistors

PDF	3 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB507

DESCRIPTION

・

・With TO-220C package

・Complement to type 2SD313

・Low collector saturation voltage

APPLICATIONS

・Designed for the output stage of 15W

to 25W AF power amplifier

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-60

V

VCEO

Collector-emitter voltage

Open base

-60

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current (DC)

-3

A

ICM

Collector current-Peak

-6

A

IB

Base current

-1

A

PC

Collector dissipation

TC=25℃

30

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-50~150

℃

THERMAL CHARACTERISTICS

SYMBOL

CHARACTERISTICS

MAX

UNIT

Rθjc

Thermal resistance junction to case

4.16

℃/W

Fig.1 simplified outline (TO-220) and symbol

Аналогичный номер детали - 2SB507

производитель	номер детали	датащи	подробное описание детали
Mospec Semiconductor	2SB507	112Kb / 3P	POWER TRANSISTORS(3.0A,60V,30W)
Wing Shing Computer Com...	2SB507	25Kb / 1P	PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
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Savantic, Inc.	2SB507	101Kb / 3P	Silicon PNP Power Transistors
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