A614 datasheet(1/2 Pages) ISC

номер детали	A614

подробное описание детали	isc Silicon PNP Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SA614

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -55V (Min.)

·Collector-Emitter Saturation Voltage-

: VCE(sat)= -0.5V (Max.)@ IC= -1A

·Collector Power Dissipation-

: PC= 25W@ TC= 25℃

APPLICATIONS

·Designed for medium power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

-55

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-3

A

PC

Collector Power Dissipation

25

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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