2N6594 datasheet(2/3 Pages) ISC

номер детали	2N6594

подробное описание детали	Silicon PNP Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

Logo

2 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2N6594

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

IC=-0.1A ;IB=0

-40

VCEsat-1

Collector-emitter saturation voltage

IC=-4A; IB=-0.4A

-1.5

VCEsat-2

Collector-emitter saturation voltage

IC=-12A; IB=-2.4A

-4.0

VBEsat

Base-emitter saturation voltage

IC=-4A; IB=-0.4A

-2.0

ICEO

Collector cut-off current

VCE=-40V; IB=0

-1.0

ICBO

Collector cut-off current

VCB=-45V; IE=0

-1.0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-5.0

hFE-1

DC current gain

IC=-4A ; VCE=-3V

200

hFE-2

DC current gain

IC=-12A ; VCE=-4V

100

Transition frequency

IC=-1.0A ; VCE=-4V;f=0.5MHz

1.5

MHz

Switching times

Delay time

0.4

μs

Rise time

1.5

μs

tstg

Storage time

5.0

μs

Fall time

IC=-2A; IB1=-IB2=-0.2A

VCC=-30V; tp=25μs;

Duty Cycle≤2.0%

1.5

μs

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

1.75

℃/W

2N6594 датащи(PDF) 2 Page - Inchange Semiconductor Company Limited

2N6594 датащи(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2 3

датащи скачать

ссылки URL