2N6339 datasheet(1/2 Pages) ISC

номер детали	2N6339

подробное описание детали	isc Silicon NPN Power Transistors

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon NPN Power Transistors

2N6338/6339/6340/6341

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 100V(Min)- 2N6338

= 120V(Min)- 2N6339

= 140V(Min)- 2N6340

= 160V(Min)- 2N6341

·High Switching Speed

·Low Saturation Voltage-

: VCE(sat)= 1.0V(Max)@ IC= 10A

APPLICATIONS

·Designed for use in industrial-military power amplifier and

switching circuit applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.875

℃/W

SYMBOL

PARAMETER

VALUE

UNIT

2N6338

120

2N6339

140

2N6340

160

VCBO

Collector-Base Voltage

2N6341

180

V

2N6338

100

2N6339

120

2N6340

140

VCEO

Collector-Emitter Voltage

2N6341

150

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

25

A

ICM

Collector Current-Peak

50

A

IB

Base Current-Continuous

10

A

PC

Collector Power Dissipation @TC=25℃

200

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200

℃

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