2N6029 datasheet(2/3 Pages) ISC

номер детали	2N6029

подробное описание детали	Silicon PNP Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2N6029 2N6030

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

2N6029

-100

VCEO(SUS)

Collector-emitter

sustaining voltage

2N6030

IC=-0.2A ;IB=0

-120

VCEsat-1

Collector-emitter saturation voltage

IC=-10A; IB=-1A

-1.0

VCEsat-2

Collector-emitter saturation voltage

IC=-16A ;IB=-4A

-2.0

VBEsat

Base-emitter saturation voltage

IC=-10A; IB=-1A

-1.8

VBE

Base-emitter on voltage

IC=-8A ; VCE=-2V

-1.5

ICBO

Collector cut-off current

VCB=ratedVCBO; IE=0

-1.0

2N6029

VCE=-50V; IB=0

ICEO

Collector cut-off current

2N6030

VCE=-60V; IB=0

-1.0

VCE=ratedVCB

-1.0

ICEV

Collector cut-off current

(VBE(off)=1.5V)

VCE=ratedVCB; TC=150℃

-5.0

IEBO

Emitter cut-off current

VEB=-7V; IC=0

-1.0

2N6029

100

hFE-1

DC current gain

2N6030

IC=-8A ; VCE=-2V

hFE-2

DC current gain

IC=-16A ; VCE=-2V

COB

Output capacitance

IE=0 ; VCB=-10V ;f=0.1MHz

1000

Transition frequency

IC=-1A ; VCE=-20V

1.0

MHz

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