2N5611 datasheet(1/2 Pages) ISC

номер детали	2N5611

подробное описание детали	isc Silicon PNP Power Transistors

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

2N5611

DESCRIPTION

·DC Current Gain-

: hFE= 30-90@IC= -2.5A

·Wide Area of Safe Operation

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -100V(Min)

·Complement to Type 2N5612

APPLICATIONS

·Designed for use in high frequency power amplifiers, audio

power amplifier and drivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-120

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-5

A

PC

Collector Power Dissipation@TC=25℃

25

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

6.0

℃/W

isc Website：www.iscsemi.cn

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