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2N3771 датащи(PDF) 2 Page - Inchange Semiconductor Company Limited

номер детали 2N3771
подробное описание детали  isc Silicon NPN Power Transistor
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N3771 датащи(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
2
isc Silicon NPN Power Transistor
2N3771
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 200mA ; IB= 0
40
V
VCEX(SUS)
Collector-Emitter Sustaining Voltage
IC= 200mA ; VBE(off)= 1.5V; RBE=100Ω
50
V
VCER(SUS)
Collector-Emitter Sustaining Voltage
IC= 200mA ; RBE= 100Ω
45
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 15A; IB= 1.5A
2.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 30A; IB= 6A
4.0
V
VBE(on)
Base-Emitter On Voltage
IC= 15A ; VCE= 4V
2.7
V
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
10
mA
ICEV
Collector Cutoff Current
VCE= 50V; VBE(off)= 1.5V
VCE= 30V; VBE(off)= 1.5V,TC=150℃
2.0
10
mA
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
2.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
5.0
mA
hFE-1
DC Current Gain
IC= 15A ; VCE= 4V
15
60
hFE-2
DC Current Gain
IC= 30A ; VCE= 4V
5
fT
Current-Gain
—Bandwidth Product
IC= 1A ; VCE= 4V ;ftest= 50kHz
0.2
MHz
Is/b
Second Breakdown Collector
Current with Base Forward Biased
VCE= 40V,t= 1.0s,Nonrepetitive
3.75
A



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