For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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11 - 305

v02.0107

GaAs PHEMT MMIC 2 WATT

POWER AMPLIFIER, 6.0 - 9.5 GHz

Reverse Isolation

vs. Temperature, 7V @ 1340 mA

Power Dissipation

-80

-60

-40

-20

0

6789

10

+25C

+85C

-40C

FREQUENCY (GHz)

Gain & Power vs. Supply Voltage @ 8 GHz

Gain & Power vs. Supply Current @ 8 GHz

16

20

24

28

32

36

6.5

7

7.5

Gain

P1dB

Psat

Vdd SUPPLY VOLTAGE (Vdc)

16

20

24

28

32

36

940

1140

1340

Gain

P1dB

Psat

Idd SUPPLY CURRENT (mA)

6

7

8

9

10

-14

-10

-6

-2

2

6

10

14

6 GHz

7 GHz

8 GHz

9 GHz

10 GHz

INPUT POWER (dBm)

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

+8 Vdc

Gate Bias Voltage (Vgg)

-2.0 to 0 Vdc

RF Input Power (RFIN)(Vdd = +7.0 Vdc) +15 dBm

Channel Temperature

175 °C

Continuous Pdiss (T= 75 °C)

(derate 104.3 mW/°C above 75 °C)

10.43 W

Thermal Resistance

(channel to package bottom)

9.59 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

Vdd (V)

Idd (mA)

+6.5

1350

+7.0

1340

+7.5

1330

Typical Supply Current vs. Vdd

Note: Amplifier will operate over full voltage ranges shown

above Vgg adjusted to achieve Idd = 1340 mA at +7.0V

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

HMC591LP5 / 591LP5E