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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BCP030T датащи(PDF) 1 Page - BeRex Corporation |
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BCP030T датащи(HTML) 1 Page - BeRex Corporation |
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1 / 5 page  www.berex.com BeRex, Inc. 1735 North 1 st Street #302 San Jose, CA 95112 tel. (408) 452-5595 September 2011 Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2 BCP030T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 300µm) The BeRex BCP030T is a GaAs Power pHEMT with a nominal 0.25 micron gate length and 300 micron gate width making the product ideally suited for applications where high-gain and medium power in the 1000 MHz to 26.5 GHz frequency range are required. The product may be used in either wideband (6-18 GHz) or narrow-band applications. The BCP030T is produced using state of the art metallization with SI3N4 passivation and is screened to assure reliability . PRODUCT FEATURES 25 dBm Typical Output Power 14 dB Typical Gain @ 12 GHz 0.25 X 300 Micron Recessed Gate APPLICATIONS Commercial Military / Hi-Rel. Test & Measurement ELECTRICAL CHARACTERISTIC (TUNED FOR POWER) Ta = 25° C SYMBOL PARAMETER/TEST CONDITIONS TEST FREQ. MIN. TYPICAL MAX. UNIT P1dB Output Power @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 24.5 25.5 25.5 dBm G1dB Gain @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 13.0 14.0 10.5 dB PAE PAE @ P1dB (Vds = 8V, Ids = 50% Idss) 12 GHz 18 GHz 65 60 % NF 50 Ohm Noise Figure (Vds=2V, Ids=15 mA 12 GHz 1.14 dB Idss Saturated Drain Current (Vgs = 0V, Vds = 1.0V) 60 90 120 mA Gm Transconductance (Vds = 2V, Vgs = 50% Idss) 120 mS Vp Pinch-off Voltage (Ids = 0.3 mA, Vds = 3V) -2.5 -1.1 -0.5 V BVgd Drain Breakdown Voltage (Ig = 0.3 mA, source open) -15.0 -12.0 V BVgs Source Breakdown Voltage (Ig = 0.3 mA, drain open) -13.0 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 121 °C/W |
Аналогичный номер детали - BCP030T |
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Аналогичное описание - BCP030T |
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