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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC4940 датащи(PDF) 1 Page - Shindengen Electric Mfg.Co.Ltd |
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2SC4940 датащи(HTML) 1 Page - Shindengen Electric Mfg.Co.Ltd |
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1 / 9 page  Unit : mm 4A NPN Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd RATINGS SHINDENGEN OUTLINE DIMENSIONS 2SC4940 Case : ITO-220 Switching Power Transistor ●Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55∼150 ℃ Junction Temperature Tj 150 ℃ Collector to Base Voltage VCBO 1200 V Collector to Emitter Voltage VCEO 550 V Emitter to Base Voltage VEBO 7 V Collector Current DC IC 4 A Collector Current Peak ICP 8 Base Current DC IB 2 A Base Current Peak IBP 4 Total Transistor Dissipation PT 30 W Dielectric Strength Vdis Terminals to casd, AC 1 minute 2 kV Mounting Torque TOR (Recommended torque) 0.5(0.3) N･m ●Electrical Characteristics (Tc=25℃) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining Voltage VCEO(sus) IC = 0.1A Min 550 V Collector Cutoff Current ICBO rated VCBO Max 0.1 mA ICEO rated VCEO Max 0.1 Emitter Cutoff Current IEBO rated VEBO Max 0.1 mA DC Current Gain hFE VCE = 5V, IC = 2A Min 10 hFEL VCE = 5V, IC = 1mA Min 10 Collector to Emitter Saturation Voltage VCE(sat) IC = 2A Max 1.0 V Base to Emitter Saturation Voltage VBE(sat) IB = 0.4A Max 1.5 V Thermal Resistance θjc Junction to case Max 4.16 ℃/W Transition Frequency fT VCE = 10V, IC = 0.4A TYP 10 MHz Turn on Time ton IC = 2A Max 0.8 Storage Time ts IB1 = 0.4A, IB2 = 0.8A Max 3.0 μs Fall Time tf RL = 75Ω, VBB2 = 4V Max 0.3 |
Аналогичный номер детали - 2SC4940 |
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Аналогичное описание - 2SC4940 |
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