For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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GaAs pHEMT MMIC LOW NOISE

AGC AMPLIFIER, 2 - 20 GHz

v08.0511

General Description

Features

Functional Diagram

The HmC463lp5(e) is a GaAs mmiC pHemT low

Noise AGC Distributed Amplifier packaged in a lead-

less 5x5 mm surface mount package which oper-

ates between 2 and 20 GHz. The amplifier provides

13 dB of gain, 2.8 dB noise figure and 18 dBm of out-

put power at 1 dB gain compression while requiring

only 60 mA from a +5V supply. An optional gate bias

(Vgg2) is provided to allow Adjustable Gain Control

(AGC) of 8 dB typical. Gain flatness is excellent at

±0.5 dB from 6 - 18 GHz making the HmC463lp5(e)

ideal for ew, eCm rADAr and test equipment appli-

cations. The HmC463lp5(e) lNA i/os are internally

matched to 50 ohms and are internally DC blocked.

Gain: 13 dB

Noise figure: 2.8 dB @ 10 GHz

p1dB output power: +18 dBm @ 10 GHz

supply Voltage: +5V @ 60 mA

50 ohm matched input/output

32 lead 5 x 5 mm smT package: 25 mm²

Typical Applications

The HmC463lp5(e) is ideal for:

• Telecom Infrastructure

• Microwave Radio & VSAT

• Test Instrumentation

• Fiber Optics

parameter

min.

Typ.

max.

min.

Typ.

max.

min.

Typ.

max.

Units

frequency range

2 - 6

6 - 18

18 - 20

GHz

Gain

10

13

9

12

8

11

dB

Gain flatness

±0.5

±0.5

±0.5

dB

Gain Variation over Temperature

0.010

0.015

0.010

0.015

0.010

0.015

dB/ °C

Noise figure

3

4

3

5

5.5

6.5

dB

input return loss

15

13

12

dB

output return loss

13

10

10

dB

output power for 1 dB Compression

(p1dB)

16

19

11

16

10

12

dBm

saturated output power (psat)

21

19

19

dBm

output Third order intercept (ip3)

30

24

22

dBm

supply Current

(idd) (Vdd = 5V, Vgg1 = -0.9V Typ.)

60

80

60

80

60

80

mA

* Adjust Vgg1 between -2 to -0V to achieve Idd = 60 mA typical.