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20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

7

7 - 3

Typical Supply Current vs. Vdd1 & Vdd2

Vdd (Vdc)

Idd (mA)

+4.5

67.2

+5.0

67.4

+5.5

67.6

Drain Bias Voltage (Vdd1, Vdd2)

+8.0 Vdc

RF Input Power (RFIN)(Vs = +5.0 Vdc)

+10 dBm

Channel Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 6.94 mW/°C above 85 °C)

0.451 W

Thermal Resistance

(channel to ground paddle)

144 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

Absolute Maximum Ratings

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

v01.0610

Recommended Bias Resistor Values

for Various Idd1 & Idd2

Idd1 + Idd2 (mA)

Rbias (Ohms)

60

27

70

16

80

13

100

8.2

120

3.9

GaAs PHEMT MMIC

LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz

Gain, Noise Figure & P1dB vs.

Supply Current @ 1900 MHz

12

14

16

18

20

22

24

0.2

0.4

0.6

0.8

1

1.2

1.4

60

70

80

90

100

110

120

GAIN

P1dB

Noise Figure

SUPPLY CURRENT (mA)

P1dB vs. Temperature @ Idd = 67 mA

Output IP3 vs. Temperature Idd = @ 67 mA

Psat vs. Temperature @ Idd = 67 mA

10

12

14

16

18

20

1.7

1.8

1.9

2

2.1

2.2

+25 C

+85 C

-40 C

FREQUENCY (GHz)

20

22

24

26

28

30

32

34

1.7

1.8

1.9

2

2.1

2.2

+25 C

+85 C

-40 C

FREQUENCY (GHz)

10

12

14

16

18

20

1.7

1.8

1.9

2

2.1

2.2

+25 C

+85 C

-40 C

FREQUENCY (GHz)