For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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GaAs PHEMT MMIC LOW NOISE

AMPLIFIER, 1.7 - 2.2 GHz

v03.0610

General Description

Features

Functional Diagram

The HMC375LP3 & HMC375LP3E high dynamic

range GaAs PHEMT MMIC Low Noise Amplifiers are

ideal for GSM & CDMA cellular basestation front-end

receivers operating between 1.7 and 2.2 GHz. This

LNA has been optimized to provide 0.9 dB noise

figure, 17 dB gain and +33 dBm output IP3 from

a single supply of +5V @ 136mA. Input and output

return losses are 14 dB typical with the LNA requiring

minimal external components to optimize the RF input

match, RF ground and DC bias. For applications

which require improved noise figure, please see the

HMC618LP3(E).

Noise Figure: 0.9 dB

Output IP3: +34 dBm

Gain: 17 dB

Very Stable Gain vs. Supply & Temperature

Single Supply: +5V @ 136 mA

50 Ohm Matched Output

Typical Applications

The HMC375LP3 / HMC375LP3E is ideal for

basestation receivers:

• GSM, GPRS & EDGE

• CDMA & W-CDMA

• DECT

Parameter

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max.

Units

Frequency Range

1.8 - 1.9

1.9 - 2.0

2.0 - 2.1

2.1 - 2.2

GHz

Gain

16.5

18.5

15.5

17.5

15

17

13

15

dB

Gain Variation Over Temperature

0.014

0.021

0.014

0.021

0.014

0.021

0.014

0.021

dB/°C

Noise Figure

1.0

1.35

0.95

1.2

0.9

1.2

0.9

1.3

dB

Input Return Loss

12

13

14

15

dB

Output Return Loss

13

16

11

8

dB

Reverse Isolation

35

34

34

34

dB

Output Power for

1dB Compression (P1dB)

16

18.5

16

18.5

15

18

14.5

17.5

dBm

Saturated Output Power (Psat)

19.5

19.5

19.5

19.5

dBm

Output Third Order Intercept (IP3)

(-20 dBm Input Power per tone,

1 MHz tone spacing)

34

33.5

33

32.5

dBm

Supply Current (Idd)

136

136

136

136

mA