For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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GaAs PHEMT MMIC LOW NOISE

AMPLIFIER, 350 - 550 MHz

v03.0610

General Description

Features

Functional Diagram

The HMC356LP3 & HMC356LP3E are high dynamic

range GaAs PHEMT MMIC Low Noise Amplifiers

is ideal for GSM & CDMA cellular basestation and

Mobile Radio front-end receivers operating between

350 and 550 MHz. This LNA has been optimized to

provide 1.0 dB noise figure, 17 dB gain and +38 dBm

output IP3 from a single supply of +5V @ 104 mA.

Input and output return losses are 15 dB typical, with

the LNA requiring only four external components to

optimize the RF input match, RF ground and DC bias.

For applications which require improved noise figure,

please see the HMC616LP3(E).

Noise Figure: ≤1.0 dB

+38 dBm Output IP3

Gain: 17 dB

Very Stable Gain vs. Supply & Temperature

Single Supply: +5V @ 104 mA

50 Ohm Matched Output

Typical Applications

The HMC356LP3 / HMC356LP3E is ideal for

basestation receivers:

• GSM 450 & GSM 480

• CDMA 450

• Private Land Mobile Radio

Parameter

Min.

Typ.

Max.

Units

Frequency Range

350 - 550

MHz

Gain

15

17

dB

Gain Variation Over Temperature

0.0032

0.010

dB / °C

Noise Figure

1.0

1.4

dB

Input Return Loss

17

dB

Output Return Loss

12

dB

Reverse Isolation

24

dB

Output Power for 1dB Compression (P1dB)

17

21

dBm

Saturated Output Power (Psat)

22.5

dBm

Output Third Order Intercept (IP3)

(-20 dBm Input Power per tone, 1 MHz tone spacing)

34

38

dBm

Supply Current (Idd)

104

mA