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LM1185SF датащи(PDF) 3 Page - HTC Korea TAEJIN Technology Co.

номер детали LM1185SF
подробное описание детали  150 mA C-MOS L.D.O. Regulator
PDF  4 Pages
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производитель  HTC [HTC Korea TAEJIN Technology Co.]
домашняя страница  http://www.htckorea.co.kr
Logo HTC - HTC Korea TAEJIN Technology Co.

LM1185SF датащи(HTML) 3 Page - HTC Korea TAEJIN Technology Co.

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150 mA C-MOS L.D.O. Regulator
LM1185SF
Typical Application Circuit
Detail Description
HTC
3 −
1. Output Capacitor
1uF(min) capacitor from VOUT to GND is required.
The output capacitor could have an effective series resistance greater than 0.1 Ω and less than .0Ω.
1uF capacitor should be connected from VIN to GND if there is more than 10 inche sofwire between
the regulator and the AC filter capacitor ,or if a battery is used as the power source. Aluminum
electrolytic or tantalum capacitor types can be used. (Since many aluminum electrolytic capacitors
freeze at approximately -30°C, solid tantalums are recommended for applications operating below -25°
C.)
When operating from sources other than batteries,supply-noise rejection and transient response can
be improved by increasing the value of the input and output capacitors and employing passive filtering
techniques.
2. Bypass Input
470pF capacitor connected from the Bypass input to ground reduces noise present on the internal
reference, which in turn significantly reduces output noise. If output noise is not concern, this input
maybe left unconnected. Larger capacitor values maybe used, but results in a longer time period to
rated output voltage when power is initially applied.
3. THERMAL CONSIDERATIONS
3.1 Thermal Shutdown
Integrated thermal protection circuitry shuts the regulator off when die temperature exceeds150°C.
The regulator remains off until the die temperature drops to approxi mately 140°C.
3.2 Power Dissipation
The amount of power the regulator dissipate is primarily a function of input and output voltage, and
output current. The following equation is used to calculate worst case actual power dissipation:
Vin
(To CMOS
Logic or Tie to
Vin if unused)
Gnd
BP
+
1uF
SHDN
Vout
+
Battery
Vout
+
470pF
Reference
Bypass
Cap(Optional)
+
1uF



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